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| FDS4935BZ September 2006 tm FDS4935BZ Dual 30 Volt P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features -6.9 A, -30 V. RDS(ON) = 22 m RDS(ON) = 35 m @ VGS = -10 V @ VGS = - 4.5 V Extended VGSS range (-25V) for battery applications ESD protection diode (note 3) High performance trench technology for extremely low RDS(ON) High power and current handling capability D2 D D2 D DD1 D1 D 5 6 7 Q1 4 3 2 Q2 SO-8 Pin 1 SO-8 G2 S2 S G1 S1 G S 8 1 S Absolute Maximum Ratings Symbol VDS\ VGS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings -30 +25 (Note 1a) Units V V A W -6.9 -50 1.6 1.0 0.9 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics R R JA JC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 C/W C/W Package Marking and Ordering Information Device Marking FDS4935BZ 2006 Fairchild Semiconductor Corporation Device FDS4935BZ Reel Size 13'' Tape width 12mm Quantity 2500 units FDS4935BZ Rev B1 (W) FDS4935BZ Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = -250 A Min -30 Typ Max Units V Off Characteristics ID = -250 A,Referenced to 25 C VDS = -24 V, VGS = 0 V VGS = +25 V, VDS = 0 V 24 -1 +10 mV/ C A A On Characteristics VGS(th) VGS(th) TJ rDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = -250 A ID = -250 A,Referenced to 25 C VGS = -10 V, ID = -6.9 A VGS = -4.5 V, ID = -5.3 A VGS = -10 V, ID = -6.9A,TJ=125 C VDS = -5 V, ID = -6.9 A -1 -1.9 -5 18 27.5 26 22 -3 V mV/ C 22 35 34 m gFS S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -15 V, V GS = 0 V, f = 1.0 MHz 1360 240 200 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qg(TOT) Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = -15 V, VGS = -10 V, ID = -1 A, RGEN = 6 12 13 68 38 22 23 108 61 40 23 ns ns ns ns nC nC nC nC Total Gate Charge, VGS = 10V Total Gate Charge, VGS = 5V Gate-Source Charge Gate-Drain Charge VDS = -15 V, ID = -6.9 A, VGS = -10 V 29 16 4 7 Drain-Source Diode Characteristics and Maximum Ratings IS VSD tRR QRR Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = -2.1 A Voltage IF = -8.8 A, Reverse Recovery Time diF/dt = 100 A/s Reverse Recovery Charge -2.1 (Note 2) A V ns nC -0.8 24 -1.2 (Note 2) 9 Notes: 1. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R JC is guaranteed by design while R CA is determined by the user's board design. a) 78C/W steady state when mounted on a 2 1in pad of 2 oz copper b) 125C/W when mounted on a .04 in2 pad of 2 oz copper c) 135C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDS4935BZ Rev B1 (W) FDS4935BZ Typical Characteristics 50 VGS = -10V 40 -ID, DRAIN CURRENT (A) -6.0V 30 -5.0V 3 VGS = -3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.5V 2.6 2.2 -4.0V -4.0V 1.8 -4.5V -5.0V 20 -3.5V 10 -3.0V 0 0 1 2 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) 4 1.4 -6.0V -8.0V -10V 1 0.6 0 10 20 30 -ID, DRAIN CURRENT (A) 40 50 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.08 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) ID = -8.8A VGS = -10V ID = -4.4A 0.06 1.4 1.2 TA = 125oC 0.04 TA = 25oC 0.02 1 0.8 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 50 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 40 VGS = 0V 10 TA = 125oC 30 1 25 C o 20 TA = 125 C 10 25 C 0 2 2.5 o o 0.1 -55oC -55 C o 0.01 0.001 3 3.5 4 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) 5 0 0.4 0.8 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS4935BZ Rev B1 (W) FDS4935BZ Typical Characteristics 10 -VGS, GATE-SOURCE VOLTAGE (V) ID = -8.8A 2000 f = 1 MHz VGS = 0 V 1600 -20V CAPACITANCE (pF) VDS = -10V Ciss 1200 8 6 -15V 4 800 Coss 400 Crss 0 2 0 0 6 12 18 24 Qg, GATE CHARGE (nC) 30 36 0 5 10 15 20 25 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 100 s 1ms 10ms 100ms 50 Figure 8. Capacitance Characteristics. -ID, DRAIN CURRENT (A) 40 10 SINGLE PULSE R JA = 125C/W TA = 25C 30 1 DC VGS = -10V SINGLE PULSE R JA = 125oC/W TA = 25oC 1s 20 0.1 10 0.01 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 R JA(t) JA = r(t) * R o JA 0.1 0.1 0.05 0.02 0.01 R = 125 C/W P(pk) t1 t2 TJ - TA = P * R JA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS4935BZ Rev B1 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Rev. I20 |
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